JPH0260062B2 - - Google Patents
Info
- Publication number
- JPH0260062B2 JPH0260062B2 JP8045985A JP8045985A JPH0260062B2 JP H0260062 B2 JPH0260062 B2 JP H0260062B2 JP 8045985 A JP8045985 A JP 8045985A JP 8045985 A JP8045985 A JP 8045985A JP H0260062 B2 JPH0260062 B2 JP H0260062B2
- Authority
- JP
- Japan
- Prior art keywords
- gallium
- semiconductor layer
- arsenic
- field effect
- mixed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8045985A JPS61237474A (ja) | 1985-04-15 | 1985-04-15 | 電界効果トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8045985A JPS61237474A (ja) | 1985-04-15 | 1985-04-15 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61237474A JPS61237474A (ja) | 1986-10-22 |
JPH0260062B2 true JPH0260062B2 (en]) | 1990-12-14 |
Family
ID=13718840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8045985A Granted JPS61237474A (ja) | 1985-04-15 | 1985-04-15 | 電界効果トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61237474A (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0469768A1 (en) * | 1990-07-31 | 1992-02-05 | AT&T Corp. | A substantially linear field effect transistor and method of making same |
-
1985
- 1985-04-15 JP JP8045985A patent/JPS61237474A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61237474A (ja) | 1986-10-22 |
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